AIXTRON AG, a German manufacturer of MOCVD (LED epitaxial growth equipment), issued a press release on February 22nd, stating that the new generation of MOCVD Platform AIX G5 HT system has achieved productivity goals: it can be extremely high at high pressures above 600 mbar The rate of high-quality gallium nitride (GaN) precipitation is one-fold higher than that of the previous generation system, and gallium nitride/indium gallium nitride (InGaN) also has excellent uniformity. In the case of baking in a reactor-free furnace or replacing any part, the formation of the above-mentioned crystal film is continuously performed in the crystalline power plant area of ​​Taiwan. Currently this MOCVD reactor is about to be converted to mass production. AIXTRON rose 2.02% against the trend on the 22nd, closing at 23.48 euros; ADS listed on NASDAQ rose 2.6% to close at 31.94.
The Associated Press reported in early February that Merriman Curhan Ford analyst Bill Ong said on the 4th that the unusually strong orders for MOCVD equipment would cause the industry to face a situation of overcapacity in the short term, which will further force LED prices to fall.
As the business opportunities in the LED lighting market gradually emerged, the performance of related stocks also attracted attention. AIXTRON AG's 2009 stocks in Germany rose by 393.70%. According to a report released by the technology marketing agency iSuppli on December 14, 2009, global LED sales are expected to increase by 10.9% year-on-year to US$7.4 billion in 2009, and further climb to US$14.3 billion in 2013.
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