Digital Power Conversion Solution with GaN FET

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SMD aluminum electrolytic capacitor

Summary:

TI's digital power conversion solutions use GaN FETs, which have lower gate capacitance, lower gate drive voltage, and higher voltage rating than their equivalent MOSFETs. To truly take advantage of the superior performance of GaN FETs, you must have a very high switching frequency. This allows for higher density and higher efficiency for both half-bridge, synchronous buck converters and forward DC/DC converters. This can be achieved by combining the C2000 Series MCUs with the LM5113 GaN driver.

Digital power conversion block diagram using GaN FET

The main features of the solution:

• C2000 Series MCU for Digital Power Conversion
• A high-speed control loop for small form factor power conversion solutions. Programmability for variable output loads, diagnostics and redundancy
• High speed GaN driver
• The LM5113 is designed to drive high-side and low-side enhancement mode gallium nitride (GaN) FETs in synchronous buck or half-bridge configurations.
• High power density solution
• High switching frequency (> 2MHz) facilitates the use of smaller magnetic or other discrete components. GaN FETs can achieve this without excessive switching losses

Related device data sheet

1. LM5113 – 5A, 100V Half-Bridge Gate Driver for Enhanced Mode GaN FETs
2. LM5113LLPEVB – Evaluation Board for LM5113
3. DAC161P997 – Integrated DAC + 4-20mA Driver with Single-Wire Interface
4. C2000 Family – 32-bit real-time controller