On the afternoon of January 12th, the third-generation semiconductor power electronic device module, packaging and heat dissipation technology seminar was held in Beijing. LED industry Sanan Optoelectronics , Hongli Optoelectronics , Infineon and other companies participated in the seminar. The seminar held a heated discussion on the development trends and challenges of major technologies such as power electronics module, packaging and heat dissipation based on third-generation semiconductors, and has a knowing significance for the development of the industry.
Professor Zhang Qiguo, an expert on the technical committee of the third-generation semiconductor industry technology innovation strategy alliance, discussed the development trend and challenges of major technologies such as power electronics module, packaging and heat dissipation based on third-generation semiconductors, and discussed the third generation. The future development direction and planning of the semiconductor industry technology innovation strategic alliance will be discussed. In addition, Professor Zhang Guoqi proposed three purposes. One is to solidify the experts in domestic power electronics module, packaging and heat dissipation technology, and set up a working group or technical committee. The solidified team can be the alliance and national technology. And the strategic development of the industry provides some suggestions; the second is that in the second half of this year, Beijing has an international technology transfer conference jointly sponsored by the Ministry of Science and Technology and Beijing. Last year, the Prime Minister and the Minister of Science and Technology will attend the conference. The theme of this year's conference is the third generation. I want to plan a solid high-level technical chapter for the solidified team. Third, the Institute of Electrical and Electronics Engineers (IEEE) Power Electronics Society (PELS) has an ITRW chapter, preparing to prepare a power electronic device module, packaging and cooling technology working group, hoping to directly connect the domestic curing team to international organizations. Go in.
Meng Hui, deputy researcher of the Materials Department of the Department of High-Tech Development and Industrialization of the Ministry of Science and Technology, said that from a national perspective, the state attaches great importance to the development of the third-generation semiconductor industry, especially in terms of applications. It is hoped that enterprises will seize the opportunity of the third-generation semiconductor industry and promote it in an all-round way. Industrial production, education and research use innovation to drive development. In the past, when it comes to electronics, it is more about microelectronics. In the past few years, the country has also made huge investments in microelectronics. However, in the country of power electronics, the concern is relatively insufficient. From the perspective of national development, if microelectronics is a The human brain, then the power electronics should be a person's spine and bones. Therefore, we hope that in the third-generation semiconductor transformation and cross-border stage, we can seize opportunities and increase investment. From the perspective of the Ministry of Science and Technology, the reform of the central financial science and technology plan is now underway. At present, the Ministry of Science and Technology is focusing on third-generation semiconductor materials and semiconductor lighting in strategic emerging electronic materials in the direction of key research and development plans and the “13th Five-Year†science and technology plan. One of the core directions is also the deployment of power electronic devices. It is also clear that this part of the work should be led by enterprises, and it is hoped that relevant enterprises can actively participate and contribute to the third-generation semiconductor special projects.
Chairman Wu Ling said that the country has many needs in the context of transformation and upgrading, green and intelligent development. Market cultivation, standard setting, and key technologies common to the industry can play a real supporting role for the development of third-generation semiconductors. . However, if everyone wants to collect firewood and high flames, we must seize the opportunity of the industry, seize the commanding heights of the third-generation semiconductor industry, and reshape the new pattern of the global semiconductor industry. The first and second generations must join hands in the third generation. Although the difference is not large, the third-generation semiconductor market is in great demand. China's high-speed rail is a very bright brand in China, but what's next? Energy IoT, weapons, Internet +, etc. need the support of silicon carbide devices, can we do well? Of course, silicon devices are also making progress, and we still need to work together. What we have to do is a hundred years of revitalizing the global semiconductor industry.
Dr. Mei Yunhui from Tianjin University shared the theme report on "Opportunities and Challenges of Wide Bandgap Power Semiconductor Device Packaging". Dr. Mei Yunhui first gave a brief introduction to the understanding of microelectronic packaging to power electronic packaging, and introduced the problems, opportunities and challenges of wide bandgap power semiconductor device packaging. Dr. Ma Guowei from Infineon Industrial Power Control Division shared the keynote report on "Technology Frontiers and Development Directions of Silicon and Silicon Carbide High Power Semiconductor Devices". Dr. Ma Guowei gave a detailed introduction to the basic concepts, advantages and disadvantages, working conditions and current status of SiC Schottky technology, SiC JFET, SiC related package high temperature and fast switching problems.
Dr. Shi Xunqing, Director of R&D of the Hong Kong Applied Science and Technology Research Institute, presented the theme report on “Development Opportunities and Challenges in Power Electronicsâ€. Dr. Shih-Shan Qing said that the three major technical directions in the future are smart cities, wearable electronics, and industry 4.0; power intelligence is the foundation and the key is power generation, transmission, distribution, use and storage; the opportunities and challenges of power electronics are huge market space. Europe and the United States are in their infancy; power electronics, microelectronics and sensor technology are integrated; new materials, new processes, new topologies, three-dimensional integration, and thermal management.
Wen Jialiang, deputy director of the Institute of Microelectronics, State Grid Smart Grid Research Institute, introduced the development trend of smart grid and energy Internet, the market demand for grid construction for IGBT, and the IGBT for power grid in the report “Smart Grid and Energy Internet IGBTâ€. The technical requirements and the prospects for IGBTs for smart grids and energy Internet are described in four parts. Deputy Director Wen Jialiang said that in the next 20 years, flexible DC transmission technology will usher in a huge development opportunity. Nearly 300 flexible DC transmission projects will inevitably bring the demand for blowout growth to the high-voltage and high-power IGBTs used in the grid---3300V/ The demand for 1500A and above IGBT devices will reach nearly 5 million, and the market capacity will be nearly 100 billion yuan.
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